MOS P-N junction diode device and method for manufacturing the same

ABSTRACT

A MOS P-N junction diode device includes a substrate having a first conductivity type, a field oxide structure defining a trench structure, a gate structure formed in the trench structure and a doped region having a second conductivity type adjacent to the gate structure in the substrate. The method for manufacturing such diode device includes several ion-implanting steps. After the gate structure is formed by isotropic etching using a patterned photo-resist layer as a mask, an ion-implanting step is performed using the patterned photo-resist layer as a mask to form a deeper doped sub-region. Then, another ion-implanting step is performed using the gate structure as a mask to form a shallower doped sub-region between the gate structure and the deeper doped sub-region. The formed MOS P-N junction diode device has low forward voltage drop, low reverse leakage current, fast reverse recovery time and high reverse voltage tolerance.

FIELD OF THE INVENTION

The present invention relates to a metal-oxide-semiconductor (MOS) P-Njunction diode device and a method for manufacturing the diode device,and more particularly to a MOS P-N junction diode device with lowleakage current, low forward voltage drop, high reverse voltage and fastreverse recovery time.

BACKGROUND OF THE INVENTION

A Schottky diode is a unipolar device using electrons as carriers, whichis characterized by high switching speed and low forward voltage drop.The limitations of Schottky diodes are the relatively low reversevoltage tolerance and the relatively high reverse leakage current. Thelimitations are related to the Schottky barrier determined by the metalwork function of the metal electrode, the band gap of the intrinsicsemiconductor, the type and concentration of dopants in thesemiconductor layer, and other factors. In contrast to the Schottkydiode, a P-N junction diode is a bipolar device that can pass morecurrent than the Schottky diode. However, the P-N junction diode has aforward voltage drop higher than that of the Schottky diode, and takeslonger reverse recovery time due to a slow and random recombination ofelectrons and holes during the recovery period.

A typical device of Schottky diode device with MOS trench has beendisclosed by U.S. Pat. No. 5,365,102. Please refer to FIGS. 1A-1Fillustrating the manufacturing method of forming the trench MOS barrierSchottky rectifier (TMBSR). Firstly, a substrate 11 with an N-typeepitaxial layer 12 grown thereon is provided. Then, a multilayered stackof a pad oxide layer 13, a mask nitride layer 15 and a photo-resistlayer 17 is formed on the N-type epitaxial layer 12. The pad oxide layer13 may relieve interlayer stress between the N-type epitaxial layer 12and the mask nitride layer 15 (FIG. 1A). A photolithography and etchingstep is performed to partially remove the mask nitride layer 15, the padoxide layer 13 and the N-type epitaxial layer 12 so as to form discretemesas 14 and trenches 20 defined between the mesas 14 (FIG. 1B). Athermal oxide layer 16 is then formed on the trench bottoms and trenchsidewalls (FIG. 1C). After the remaining portions of the mask nitridelayer 15 and the pad oxide layer 13 are removed (FIG. 1D), an anodemetal layer 18 is subsequently plated thereon (FIG. 1E). The anode metallayer 18 is then subjected to a metal patterning step, wherein aSchottky barrier contact is formed on the interface between the anodemetal layer 18 and the mesa 14 of the N-type epitaxial layer 12. Atlast, a backside grinding step is conducted on the backside of the waferand a cathode electrode 19 is formed thereon (FIG. 1F). The process ofmanufacturing the TMBSR is thus basically completed.

The TMBSR made by the aforementioned method has a low forward voltagedrop but a high reverse leakage current. If a lower reverse-biasedleakage current is desired, one solution is to choose a metal electrodewith a higher work function to reduce the reverse leakage current.However, in this context the forward voltage drop of the TMBSR isincreased. Accordingly, there is a trade-off between the forward voltagedrop and the reverse leakage current.

An alternative way in reducing the reverse leakage current is to deepenthe trenches so as to increase the length of the pitch-off channel toinhibit the reverse leakage current. Nevertheless, such device cannotresist high reverse voltage, unless the thickness of the N-typeepitaxial layer 12 is increased to improve the reverse voltagetolerance. In conclusion, Schottky diode is not suitable for high powerapplication. Current commercial Schottky diode device has a reversevoltage tolerance less than 600 V. In fact, so-called 600 V Schottkydiode device consists of two TMBSRs connected in series and each has areverse voltage tolerance of 300 V, which leads to a higher forwardvoltage drop. Thus, it is a challenge to design a diode device with highreverse voltage tolerance (e.g. higher than 600 V), low forward voltagedrop, low reverse leakage current and fast reverse recovery time. SinceSchottky diode device has its limitation, a planar P-N junction devicemay be used to resist high reverse voltage. If the reverse recovery timeand the forward voltage drop of the P-N junction device can be improved,the planar P-N junction device can not only be benefited by theadvantages identical to that of a Schottky diode device, but also canreduce reverse leakage current and withstand high reverse voltage.

SUMMARY OF THE INVENTION

The present invention provides a MOS P-N junction diode device combiningan n-channel MOS structure and a P-N junction diode to achieve betterperformance involving low reverse leakage current, low forward voltagedrop, high reverse voltage and fast reverse recovery time.

The present invention also provides a convenient method formanufacturing the MOS P-N junction diode device. Fewer masks arerequired for this manufacturing method.

In accordance with an aspect of the present invention, the MOS P-Njunction diode device includes a substrate, a field oxide structure, agate structure, a doped region, a top electrode and a bottom electrode.The top electrode and the bottom electrode are formed at opposite sidesof the substrate. The doped region has different conductivity type fromthe substrate. Besides, an ohmic contact is formed between the dopedregion and the top electrode. The field oxide structure defines a trenchstructure in which the gate structure is formed. The doped region has aplurality of adjacent doped sub-regions with different implantationdepths and extends from a surface of the substrate. Hence, a MOSstructure and a P-N junction diode are provided in the diode device.

In accordance with another aspect of the present invention, a first masklayer having an opening, formed by a first photolithography step and anetching step, is formed on a substrate and a first ion-implanting stepis performed through the opening to form a guard ring in the substrate.Then, a second photolithography step and an oxide wet etching step areperformed and a portion of the first mask layer is removed to form afield oxide structure defining a trench structure. A gate structure, asecond mask layer and a photo-resist layer, patterned by a thirdphotolithography step and defining the gate structure, are formed in thetrench structure wherein the remaining second mask layer formed by anisotropic etching step is shorter than the patterned photo-resist layer.A second ion-implanting step and a third ion-implanting step areperformed by using the patterned photo-resist layer and the remainingsecond mask layer as masks, respectively, to form adjacent dopedsub-regions with different implantation depths. At last, a top electrodeand a bottom electrode are disposed at opposite sides of the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The above objects and advantages of the present invention will becomemore readily apparent to those ordinarily skilled in the art afterreviewing the following detailed description and the accompanyingdrawings, in which:

FIGS. 1A-1F schematically illustrate the manufacturing method of formingthe known trench MOS barrier Schottky rectifier;

FIG. 2 is a cross-sectional view illustrating a preferred embodiment ofa MOS P-N junction diode device according to the present invention; and

FIGS. 3A-3I schematically illustrate the manufacturing method forforming the MOS P-N junction diode device of FIG. 2.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present invention will now be described more specifically withreference to the following embodiments. It is to be noted that thefollowing descriptions of preferred embodiments of this invention arepresented herein for purpose of illustration and description only. It isnot intended to be exhaustive or to be limited to the precise formdisclosed.

Referring to FIG. 2, FIG. 2 schematically illustrates a preferredembodiment of a MOS P-N junction diode device according to the presentinvention. Please note that the article “a” or “an” may be used for someelements, but the number of the elements is not limited to “one”. Theamount may vary with different applications. As shown in FIG. 2, the MOSP-N junction diode device 2 primarily includes a substrate 21, a trenchstructure 22, a gate structure 23, a field oxide structure 24, a topelectrode 25, a bottom electrode 26 and a doped region 27. The substrate21 includes a heavily-doped N-type silicon layer 211 and a lightly-dopedN-type epitaxial layer 212. The field oxide structure 24 is formed onthe substrate 21 and defines the trench structure 22. The gate structure23 is formed in the trench structure 22 on the N-type epitaxial layer212 wherein a gate oxide layer 231 is interfaced between the gatestructure 23 and the substrate 21. The top electrode 25 covers thetrench structure 22, the gate structure 23 and the field oxide structure24, while the bottom electrode 26 is formed on the opposite surface ofthe substrate 21. Both the top electrode 25 and the bottom electrode 26are made of metal material, for example Al, Al alloy or other suitablemetal material. An adhesion layer 251 made of Ti or TiN may be providedbetween the top electrode 25 and the substrate 21 to enhance the bondingof the top electrode 25 to the substrate 21. Ohmic contact 2620 isformed on the interface between the top electrode 25 and the dopedregion 27.

In this embodiment, the doped region 27 includes a first dopedsub-region 272 and a second doped sub-region 273 with differentimplantation depths. The first doped sub-region 272 is deeper than thesecond doped sub-region 273. A guard ring 271 may be formed in the edgeof the MOS P-N junction diode device to define the device region. Thefirst doped sub-region 272, the second doped sub-region 273 and theguard ring 271 are implanted with P-type dopants. Both of the dopedsub-regions 272 and 273 extend from the surface 2120 of thelightly-doped N-type epitaxial layer 212. It means that no other N dopedregion will be formed between the doped region 27 and the surface 2120of the lightly-doped N-type epitaxial layer 212. The p-type dopedsub-regions 272 and 273 together with the lightly-doped N-type epitaxiallayer 212 provide a P-N junction adjacent to the n-channel MOS structureincluding the gate structure 23, the gate oxide layer 231 and thesubstrate 21.

According to the present invention, the MOS P-N junction diode device 2integrates an n-channel MOS structure with a P-N junction diode. Byvirtue of this structure design, when the MOS P-N junction diode device2 is forward-biased, the n-channel MOS structure and the P-N junctiondiode are operated as parallel connection. Most current flows throughthe MOS structure operated as a majority carrier device so as to providelow forward voltage drop and high switching speed. Hence, in the forwardmode, the MOS structure can compensate the deficiency of the P-Njunction diode to rival Schottky diode. When the MOS P-N junction diodedevice 2 is reverse-biased, the depletion region is formed in the P-Njunction diode and the n channel in the MOS structure turns off, both ofwhich inhibit the leakage current. Therefore, the MOS P-N junction diodedevice 2 has the advantage over Schottky diode in reverse mode.Moreover, the MOS P-N junction diode device 2 can withstand higherreverse voltage than the Schottky diode. Because of these advantages,the MOS P-N junction diode device 2 provides much better performancethan the conventional Schottky diode and P-N junction diode.

FIGS. 3A-3I illustrate the manufacturing method for forming the MOS P-Njunction diode of FIG. 2 according to the present invention. As shown inFIG. 3A, a stack structure including a substrate 21, a mask oxide layer201 and a first patterned photo-resist layer 2011 is formed. Thesubstrate 21 includes a heavily-doped N-type silicon layer 211 and alightly-doped N-type epitaxial layer 212. The mask oxide layer 201 isgrown by thermal oxidation or deposited on the substrate 21.

In FIG. 3B, the mask oxide layer 201 is subjected to an etching step topartially remove the mask oxide layer 201 to expose a portion of thelightly-doped N-type epitaxial layer 212. After removing the firstpatterned photo-resist layer 2011, a P-type dopant such as B ion or BF₂is then implanted through the opening 202 of the mask oxide layer 201.It is noted that the P-type dopant can be implanted before or after theremoval of the photo-resist layer 2011. A thermal drive-in step isintroduced to form the deep guard ring 271 which defines the deviceregion in the lightly-doped N-type epitaxial layer 212.

In FIG. 3C, a second patterned photo-resist layer 2012 is formed on aportion of the mask oxide layer 201, which will form the field oxidestructure 24 later. Then, an etching procedure is performed to removethe mask oxide layer 201 not covered by the second patternedphoto-resist layer 2012. After removing the second patternedphoto-resist layer 2012, the remaining mask oxide layer 201 is the fieldoxide structure 24 defining the trench structure 22 as shown in FIG. 3D.

In FIG. 3E, an insulating layer 2021, a polysilicon layer 2022 and amask oxide layer 2023 are sequentially formed on the lightly-dopedN-type epitaxial layer 212 and the field oxide structure 24. Theinsulating layer 2021 is an oxide layer. The polysilicon layer 2022 maybe a doped or undoped polysilicon layer deposited by chemical vapordeposition (CVD). The mask oxide layer 2023 is formed by thermaloxidation. Thereafter, a third patterned photo-resist layer 2013 usedfor defining the gate structure 23 is formed on the mask oxide layer2023.

Then, an isotropic etching step (e.g. wet etching) and an anisotropicetching step (e.g. dry etching) are performed to partially remove themask oxide layer 2023 and the polysilicon layer 2022, respectively. FIG.3F shows that the remaining mask oxide layer 2023 is shorter than theremaining polysilicon layer 2022, i.e. the gate structure 23. A P-typedopant is further implanted into the lightly-doped N-type epitaxiallayer 212 by using the third patterned photo-resist layer 2013 as amask. Hence, the first doped sub-region 272 is formed adjacent to thegate structure 23.

In FIG. 3G, the third patterned photo-resist layer 2013 is removed. AP-type dopant is further implanted into the lightly-doped N-typeepitaxial layer 212 by using the mask oxide layer 2023 as a mask. Hence,the second doped sub-region 273 is formed under the gate structure 23and adjacent to the first doped sub-region 272. The second dopedsub-region 273 is shallower than the first doped sub-region 272. It isnoted that a rapid thermal annealing (RTA) can be employed to activateall implants at this stage. Separate rapid thermal annealing can bepreformed after each individual implanting step as an alternativeapproach.

In FIG. 3H, a dry etching step is performed to remove the mask oxidelayer 2023 and a portion of the insulating layer 2021. The remaininginsulating layer 2021 is the gate oxide layer 231 for isolating the gatestructure 23 from the active region in the substrate 21.

At last, the top electrode 25 and the bottom electrode 26 are formed atthe opposite sides of the resulting structure, as shown in FIG. 3I. Ametal material, for example Al or Al alloy forms the electrodes 25 and26 by sputtering and sintering and thus provide good ohmic contact. Anadhesion layer 251 may be formed prior to the formation of the topelectrode 25. The adhesion layer 251 is deposited by Ti or TiNsputtering and subjected to a rapid thermal nitridation to enhance thebonding effect. After these steps, the MOS P-N junction diode device 2is obtained.

According to the present invention, the MOS P-N junction diode devicehas low forward voltage drop and rapid switching speed in the forwardmode and has low reverse leakage current and high voltage tolerance inthe reverse mode. By integrating the MOS structure and the P-N junctiondiode, the present invention can overcome the trade-off between lowforward voltage drop and low reverse leakage current. Furthermore, themanufacturing method according to the present invention uses the fewestphoto-resist layers to manufacture the MOS P-N junction diode device.Therefore, the manufacturing method is highly competitive.

While the invention has been described in terms of what is presentlyconsidered to be the most practical and preferred embodiments, it is tobe understood that the invention needs not to be limited to thedisclosed embodiment. On the contrary, it is intended to cover variousmodifications and similar arrangements included within the spirit andscope of the appended claims which are to be accorded with the broadestinterpretation so as to encompass all such modifications and similarstructures.

1. A MOS P-N junction diode device, comprising: a n type substrate; afield oxide structure formed on the n type substrate and defining atrench structure; a gate structure formed in the trench structure; asingle p type Boron ion doped region formed in the n type substrate andadjacent to the gate structure, and comprising a plurality of adjacent ptype Boron ion doped sub-regions with different implantation depths, theadjacent p type Boron ion doped sub-regions extending from a surface ofthe n type substrate; a p type guard ring in the n type substrateadjacent to the field oxide structure and the single p type Boron iondoped region, wherein the single p type Boron ion doped region comprisesa first p type Boron ion doped sub-region shallower than the p typeguard ring and a second p type Boron ion doped sub-region shallower thanthe first p type Boron ion doped sub-region, the second p type Boron iondoped sub-region disposed between the gate structure and the first ptype Boron ion doped sub-region; and a top electrode and a bottomelectrode formed on opposite surfaces of the n type substrate whereinthe top electrode is disposed on the trench structure and the fieldoxide structure and a portion of the field oxide structure is exposedfrom the top electrode, and an ohmic contact being formed between thetop electrode and the single p type Boron ion doped region; wherein thetop electrode includes a titanium nitride contacted to the single p typeBoron ion doped region and an aluminum covered on the titanium nitride,and the titanium nitride is subjected to a rapid thermal nitridation. 2.The MOS P-N junction diode device according to claim 1 wherein the ntype substrate comprises a relatively heavily-doped N-type silicon layerand a relatively lightly-doped N-type epitaxial layer.
 3. The MOS P-Njunction diode device according to claim 1 wherein the gate structure isa doped polysilicon layer.
 4. The MOS P-N junction diode deviceaccording to claim 1, further comprising a gate oxide layer between thegate structure and the n type substrate.